r07ds1091ej0200 rev.2.00 page 1 of 8 mar 24, 2015 preliminary datasheet rjh60a01rdpd-a0 600v - 5a - igbt application: inverter features ? reverse conducting igbt with monolithic diode ? short circuit withstand time (5 ? s typ.) ? low collector to emitter saturation voltage v ce(sat) = 1.9 v typ. (at i c = 5 a, v ge = 15 v, ta = 25c) ? built-in fast recovery diode (t rr = 100 ns typ.) in one package ? trench gate and thin wafer technology ? high speed switching t f = 85 ns typ. (at v cc = 300 v, v ge = 15 v, i c = 5 a, rg = 5 ? , ta = 25c, inductive load) outline renesas package code: prss0004zk-a ( package name : to-252a) 1 3 2 4 1. gate 2. collecto r 3. emitter 4. collecto r c g e absolute maximum ratings (ta = 25c) item symbol ratings unit collector to emitter voltage / diode reverse voltage v ces / v r 600 v gate to emitter voltage v ges 30 v collector current tc = 25c i c 10 a tc = 100c i c 5 a collector peak current i c (peak) note1 15 a collector to emitter diode forward current i df 5 a collector to emitter diode forward peak current i df (peak) note1 15 a collector dissipation p c note2 29.4 w junction to case thermal resistance ? j-c note2 4.25 ? c/ w junction temperature tj 150 ? c storage temperature tstg ?55 to +150 ? c notes: 1. pw ? 10 ? s, duty cycle ? 1% 2. value at tc = 25 ? c r07ds1091ej0200 rev.2.00 mar 24, 2015
rjh60a01rdpd-a0 preliminary r07ds1091ej0200 rev.2.00 page 2 of 8 mar 24, 2015 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions zero gate voltage collector current / diode reverse current i ces / i r ? ? 1 ? a v ce = 600 v, v ge = 0 v gate to emitter leak current i ges ? ? 100 na v ge = 30 v, v ce = 0 v gate to emitter cutoff voltage v ge(off) 4.5 ? 7.5 v v ce = 10 v, i c = 1 ma collector to emitter saturation voltage v ce(sat) ? 1.9 2.3 v i c = 5 a, v ge = 15 v note3 v ce(sat) ? 2.8 ? v i c = 10 a, v ge = 15 v note3 input capacitance cies ? 160 ? pf v ce = 25 v v ge = 0 v f = 1 mhz output capacitance coes ? 12 ? pf reveres transfer capacitance cres ? 6 ? pf total gate charge qg ? 11 ? nc v ge = 15 v v ce = 300 v i c = 5 a gate to emitter charge qge ? 2.5 ? nc gate to collector charge qgc ? 6.7 ? nc turn-on delay time t d(on) ? 30 ? ns v cc = 300 v v ge = 15 v i c = 5 a, rg = 5 ?? inductive load rise time t r ? 10 ? ns turn-off delay time t d(off) ? 40 ? ns fall time t f ? 85 ? ns turn-on energy e on ? 0.13 ? mj ? turn-off energy e off ? 0.07 ? mj ? total switching energy e total ? 0.20 ? mj ? short circuit withstand time t sc 3 5 ? ? s v ce ? 360 v, v ge = 15 v tj = 100 ? c frd forward voltage v f ? 2.0 ? v i f = 5 a note3 frd reverse recovery time t rr ? 100 ? ns i f = 5 a di f /dt = 100 a/ ? s frd reverse recovery charge q rr ? 0.25 ? ? c frd peak reverse recovery current i rr ? 5 ? a notes: 3. pulse test.
rjh60a01rdpd-a0 preliminary r07ds1091ej0200 rev.2.00 page 3 of 8 mar 24, 2015 main characteristics 16 12 8 4 1234 5 tc = 150 c pulse test 12 v 15 v 18 v 0 v ge = 10 v typical output characteristics 16 12 8 4 1234 5 tc = 2 5 c pulse test 12 v 15 v 18 v collector current i c (a) 00 0 v ge = 10 v collector to emitter voltage v ce (v) collector current i c (a) maximum safe operation area collector to emitter voltage v ce (v) typical output characteristics collector current i c (a) collector to emitter voltage v ce (v) collector current i c (a) collector to emitter voltage v ce (v) turn-off soa 0 200 400 600 800 20 15 10 5 0 100 10 0.1 1 0.01 1100 10 1000 tc = 25 c single pulse 100 s pw = 10 s collector current i c (a) case temperature tc (c) maximum dc collector current vs. case temperature 8 6 4 2 0 02550 100 75 125 150 175 12 10 02550 100 75 125 150 175 collector dissipation pc (w) case temperature tc (c) collector dissipation vs. case temperature 40 30 20 10 0
rjh60a01rdpd-a0 preliminary r07ds1091ej0200 rev.2.00 page 4 of 8 mar 24, 2015 10 8 6 4 2 0 0 typical transfer characteristics collector current i c (a) 0 4 8 12 16 20 v ce = 10 v pulse test gate to emitter voltage v ge (v) 150c tc = 2 5 c collector to emitter saturation voltage vs. junction temparature (typical) ? 25 0 25 75 125 50 100 150 collector to emitter saturation voltage v ce(sat) (v) case temparature tc ( c) 3 a 5 a i c = 10 a 1 4 2 5 3 v ge = 15 v pulse test 1 3 2 4 6 5 collector to emitter saturation voltage vs. gate to emitter voltage (typical) collector to emitter saturation voltage v ce(sat) (v) gate to emitter voltage v ge (v) 81012 18 16 14 20 3 2 4 6 5 i c = 10 a 5 a i c = 10 a 5 a tc = 2 5 c pulse test 1 81012 18 16 14 20 collector to emitter saturation voltage vs. gate to emitter voltage (typical) collector to emitter saturation voltage v ce(sat) (v) gate to emitter voltage v ge (v) tc = 150 c pulse test gate to emitter cutoff voltage vs. junction temparature (typical) ? 25 0 25 75 125 50 100 150 gate to emitter cutoff voltage v ge(off) (v) v ce = 10 v pulse test case temparature tc (c) 1 ma i c = 10 ma 4 3 2 1 0 frequency characteristics (typical) collector current i c(rms) (a) frequency f (khz) 1 100 10 1000 tj = 125c tc = 90c v ce = 300 v v ge = 15 v rg = 5 duty = 50% 0 collector current wave (square wave) 4 16 12 8
rjh60a01rdpd-a0 preliminary r07ds1091ej0200 rev.2.00 page 5 of 8 mar 24, 2015 1100 10 1 100 10 1100 10 1 100 10 gate resistance rg ( ) (inductive load) gate resistance rg ( ) (inductive load) swithing energy losses e (mj) switching times t (ns) swithing energy losses e (mj) collector current i c (a) (inductive load) switching characteristics (typical) (1) switching characteristics (typical) (2) switching characteristics (typical) (3) switching characteristics (typical) (4) collector current i c (a) (inductive load) switching times t (ns) 0.1 1 0.01 1 10 100 1000 t d(off) t d(on) t f t r v cc = 300 v, v ge = 15 v i c = 5 a, tc = 150 c v cc = 300 v, v ge = 15 v i c = 5 a, tc = 150 c eoff eon v cc = 300 v, v ge = 15 v rg = 5 , tc = 150 c 10 1 0.1 0.01 eoff eon 1 100 10 1000 100 10 0 1000 v cc = 300 v, v ge = 15 v rg = 5 , tc = 150 c t d(off) t d(on) t f t r 50 25 150 75 125 100 switching characteristics (typical) (5) t d(on) case temperature tc (c) (inductive load) switching times t (ns) v cc = 300 v, v ge = 15 v i c = 5 a, rg = 5 t f t d(off) t r 0.01 0.1 1 50 25 150 75 125 100 case temperature tc (c) (inductive load) switching characteristics (typical) (6) eoff eon swithing energy losses e (mj) v cc = 300 v, v ge = 15 v i c =5 a, rg = 5
rjh60a01rdpd-a0 preliminary r07ds1091ej0200 rev.2.00 page 6 of 8 mar 24, 2015 8 4 20 16 12 8 4 16 12 capacitance c (pf) 1 10 100 10000 1000 0100 50 150 200 250 300 cies coes cres gate charge qg (nc) dynamic input characteristics (typical) typical capacitance vs. collector to emitter voltage 800 600 400 200 0 0 16 12 8 4 0 4812 16 v ge = 0 v f = 1 mhz ta = 25 c collector to emitter voltage v ce (v) collector to emitter voltage v ce (v) gate to emitter voltage v ge (v) diode current slope di f /dt (a/ s) reverse recovery time t rr (ns) reverse recovery time vs. diode current slope (typical) diode current slope di f /dt (a/ s) reverse recovery current i rr (a) reverse recovery current vs. diode current slope (typical) diode current slope di f /dt (a/ s) reverse recovery charge q rr ( c) reverse recovery charge vs. diode current slope (typical) 0 0 40 80 200 120 160 v cc = 300 v i f = 5 a tc = 150 c 25 c c-e diode forward voltage v cef (v) forward current vs. forward voltage (typical) forward current i f (a) 012 6 5 4 3 tc = 2 5 c 150 c 0 0 40 80 200 120 160 0.4 0.2 1.0 0.8 0.6 tc = 150 c 25 c v cc = 300 v i f = 5 a 0 40 80 200 120 160 0 tc = 150 c 25 c v cc = 300 v i f = 5 a v cc = 300 v i c = 5 a tc = 25 c v ge v ce 400 200 800 600 0 v ge = 0 v pulse test
rjh60a01rdpd-a0 preliminary r07ds1091ej0200 rev.2.00 page 7 of 8 mar 24, 2015 pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width (igbt) 0.1 0.3 3 1 100 1 m 10 m 100 m 1 10 100 p dm pw t d = pw t j ? c(t) = s (t) ? j ? c j ? c = 4.25 c/w, tc = 25 c tc = 25 c 0.2 0.1 0.5 d = 1 0.01 0.02 0.05 1 shot pulse switching time test circuit waveform waveform diode clamp d.u.t rg l v cc t rr i rr di f /dt 0.9 i rr i f t d(off) t d(on) t f t r 90% 90% 90% 10% 10% 10% v ge i c 0.5 i rr 0 diode reverse recovery time test circuit d.u.t v cc i f rg l
rjh60a01rdpd-a0 preliminary r07ds1091ej0200 rev.2.00 page 8 of 8 mar 24, 2015 package dimension 6.5 0.3 (5.2 0.3) 2.3 0.2 0.55 0.1 0.2 max 0.55 0.1 1.1 0.3 6.1 0.3 2.7 0.3 0.75 0.15 (1.2 max) 2.29 0.3 2.29 0.3 1.2 max (4.3) (5.2) unit: mm ? ? ordering information orderable part number quan tity shipping container rjh60a01rdpd-a0#j2 3000 pcs taping
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